Email Address: xpslee@skku.edu
sblee_pic.png
Home Page: [http]http://chem.skku.ac.kr/~sblee
Telephone: +82-31-290-7063/FAX: +82-31-290-7075

  • 1965. Mar. ∼ 1973. Feb. BS in chemistry, Sungkyunkwan University, Korea
  • 1973. Mar. ∼ 1975. Feb. MS in chemistery(Physical Chemistry),Sungkyunkwan University, Korea
  • 1976. Feb. ∼ 1981. Mar. PhD in chemistry (Surface Science), Muenchen University, Germany
  • 1981. Mar. ∼ 1982. Feb. Post-doc. Fellow in Chemical Engineering, Stanford University, USA
  • 1982. Mar. ∼ Present Professor in Department of Chemistry, Sungkyunkwan University, Korea
  • 1995. June. ∼ 1995. Aug. Visiting Professor, Institute of Physical and Theoretical Chemistry, University of Bonn, Germany
  • 1998. Mar. ∼ 1999. Feb. Visiting Professor, Department of Chemistry, Pohang University of Science and Technology, Korea

Research Interests

Surface physical chemistry

The field of surface physical chemistry is currentry of great importance in a interdisciplinary areas, including chemistry, applied solid physics, and material science. An essential part of our research activities concerns a fundamental understanding of heterogeneous catalysis and thin film growth of semiconductor by chemical vapor deposition on the microscopic scale under ultra-high vacuum (UHV) conditions. This includes studies of the energetics of the chemisorption process as well as of adsorption and desorption kinetics of simple gases and simple surface reactions using various techniques such as low-energy electron diffraction(LEED), Auger electron spectroscopy(AES), X-ray photoelectron spectroscopy(XPS), Ultraviolet photoelectron spectroscopy(UPS), $Cs+$-ion scattering, and Thermal desorption spectroscopy(TDS).

Current main subjects;
  • Structures and kinetics of small gases such as $H2$, CO on clean/modified metal surfaces.
  • Growth of ultra-thin metal films on single-crystal metal substrate.
  • Surface reactions for growth of SiC by decomposition of organosilicon compounds on single-crystal silicon surfaces.

Selected Publications


  1. "Growth of $TiO2$ thin films on Si(100) and Si(111) substrates using single molecular precursor by high-vacuum MOCVD and comparison of growth behavior and structural properties" Journal of Crystal Growth 235, 450-456, 2002/01/31
  2. "Growth of $TiO2$ thin films on Si(100) substrates using single molecular precursors by metal organic chemical vapor deposition" Surface and Coatings Technology 131, 88-92, 2000/11/20
  3. "Growth of BON Thin Films by Plasma Assisted MOCVD and Study of Deposition Parameter Effects on the Film Structure" Journal de Physique Ⅳ 11, 763-770 ,2001/09/30
  4. "Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition" Journal of Vacuum Science & Technology A 19, 1887-1893, 2001/07/20
  5. "MOCVD of $MgAl2O4$ thin films using new single molecular precursors: application of β-hydrogen elimination to the growth of heterometallic oxide films" Applied Surface Science,169, 170, 581-586, 2001/01/31
  6. "High rate deposition of poly-Si thin films at low temperature using new designed magnetron sputtering source" Surface and Coatings Technology 131, 211-215, 2000/11/20 18." Growth of Hf(C,N) thin films on Si(100) and D2 steel substrates by plasma assisted MOCVD" Surface and Coatings Technology 131, 73-78, 2000/11/20
  7. "High vacuum chemical vapor deposition of cubic SiC thin fils on Si(001) substrates using single source precursor" Surface and Coatings Technology 131, 147-152, 2000/11/20
  8. S. C. Park, H. Kang, S. B. Lee, "Reaction intermediate in thermal decomposition of 1,3-disilabutane to silicon carbide on Si(111); Comparative study of $Cs+$ reactive ion scattering and secondary ion mass spectrometry" Surf. Sci. 450, 117-125, 2000

SKKU
440-746, 경기도 수원시 장안구 천천동 300 성균관대학교 자연과학캠퍼스 화학과 / TEL 031-290-7060 / FAX 031-290-7075
Department of Chemistry SungKyunKwan University Natural Science Campus Suwon 440-746 Korea
Copyright by SKKU Chemistry